| PART |
Description |
Maker |
| HYE18P128160AF-12.5 |
Synchronous Burst CellularRAM (1.5G) CellularRAM
|
infineon
|
| EMC326SP16AKS-90L EMC326SP16AKS-90LF EMC326SP16AKS |
2Mx16 bit CellularRAM AD-MUX
|
Emerging Memory & Logic Solutions Inc
http://
Emerging Memory & Logic...
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
| K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
Samsung Electronic
|
| HSD8M32B4-10 HSD8M32B4-10L HSD8M32B4-12 HSD8M32B4- |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
http://
Hanbit Electronics Co.,Ltd.
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
| K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3 |
2M x 32 Synchronous MASKROM Data Sheet
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
